R6086YNZ4C13
Manufacturer Product Number:

R6086YNZ4C13

Product Overview

Manufacturer:

Rohm Semiconductor

DiGi Electronics Part Number:

R6086YNZ4C13-DG

Description:

NCH 600V 86A, TO-247, POWER MOSF
Detailed Description:
N-Channel 600 V 86A (Tc) 781W (Tc) Through Hole TO-247G

Inventory:

568 Pcs New Original In Stock
13001156
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R6086YNZ4C13 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V, 12V
Rds On (Max) @ Id, Vgs
44mOhm @ 17A, 12V
Vgs(th) (Max) @ Id
6V @ 4.6mA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
5100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
781W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247G
Package / Case
TO-247-3
Base Product Number
R6086

Datasheet & Documents

Datasheets
R6086YNZ4

Additional Information

Other Names
846-R6086YNZ4C13
Standard Package
30

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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