Manufacturer Product Number:
R6006JND3TL1
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
R6006JND3TL1-DG
Description:
MOSFET N-CH 600V 6A TO252
Detailed Description:
N-Channel 600 V 6A (Tc) 86W (Tc) Surface Mount TO-252
Inventory:
12 Pcs New Original In Stock
12850600
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
R6006JND3TL1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
936mOhm @ 3A, 15V
Vgs(th) (Max) @ Id
7V @ 800µA
Gate Charge (Qg) (Max) @ Vgs
15.5 nC @ 15 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
410 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
86W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
R6006
Datasheet & Documents
Datasheets
Additional Information
Other Names
846-R6006JND3TL1TR
846-R6006JND3TL1DKR
846-R6006JND3TL1CT
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPD80R1K2P7ATMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
14924
DiGi PART NUMBER
IPD80R1K2P7ATMA1-DG
UNIT PRICE
0.40
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
Related Products
FDN361BN
MOSFET N-CH 30V 1.4A SUPERSOT3
R6006KND3TL1
MOSFET N-CH 600V 6A TO252
FDP8442
MOSFET N-CH 40V 23A/80A TO220-3
