IMB1AT110
Manufacturer Product Number:

IMB1AT110

Product Overview

Manufacturer:

Rohm Semiconductor

DiGi Electronics Part Number:

IMB1AT110-DG

Description:

TRANS PREBIAS DUAL PNP SMT6
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SMT6

Inventory:

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13525895
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IMB1AT110 Technical Specifications

Category
Bipolar (BJT), Bipolar Transistor Arrays, Pre-Biased
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Not For New Designs
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
22kOhms
Resistor - Emitter Base (R2)
22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Supplier Device Package
SMT6
Base Product Number
IMB1

Additional Information

Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095

Alternative Models

PART NUMBER
RN2603(TE85L,F)
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
6000
DiGi PART NUMBER
RN2603(TE85L,F)-DG
UNIT PRICE
0.05
SUBSTITUTE TYPE
Direct
DIGI Certification
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certification_015
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