Manufacturer Product Number:
BSM600D12P4G103
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
BSM600D12P4G103-DG
Description:
SIC 2N-CH 1200V 567A MODULE
Detailed Description:
Mosfet Array 1200V (1.2kV) 567A (Tc) 1.78kW (Tc) Chassis Mount Module
Inventory:
4 Pcs New Original In Stock
13001987
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
BSM600D12P4G103 Technical Specifications
Category
FETs, MOSFETs, FET, MOSFET Arrays
Manufacturer
ROHM Semiconductor
Packaging
Box
Series
-
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel
FET Feature
Standard
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
567A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
4.8V @ 291.2mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
59000pF @ 10V
Power - Max
1.78kW (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
BSM600
Datasheet & Documents
Datasheets
Additional Information
Other Names
846-BSM600D12P4G103
Standard Package
4
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
2N7002DWL-TP
MOSFET 2N-CH 60V 0.115A SOT23-6L
G2K3N10L6
MOSFET 2N-CH 100V 3A SOT23-6L
PSMN045-100HLX
MOSFET 2N-CH 100V 21A LFPAK56D
