BSM120D12P2C005
Manufacturer Product Number:

BSM120D12P2C005

Product Overview

Manufacturer:

Rohm Semiconductor

DiGi Electronics Part Number:

BSM120D12P2C005-DG

Description:

MOSFET 2N-CH 1200V 120A MODULE
Detailed Description:
Mosfet Array 1200V (1.2kV) 120A (Tc) 780W Module

Inventory:

13 Pcs New Original In Stock
13523465
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BSM120D12P2C005 Technical Specifications

Category
FETs, MOSFETs, FET, MOSFET Arrays
Manufacturer
ROHM Semiconductor
Packaging
Bulk
Series
-
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
2.7V @ 22mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
14000pF @ 10V
Power - Max
780W
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
Module
Supplier Device Package
Module
Base Product Number
BSM120

Datasheet & Documents

Reliability Documents
SiC PM Reliability Test
Datasheets
BSM120D12P2C005 BSM080D12P2C008

Additional Information

Other Names
Q7641253
Standard Package
12

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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