FA4F4M-T1B-A
Manufacturer Product Number:

FA4F4M-T1B-A

Product Overview

Manufacturer:

Renesas Electronics Corporation

DiGi Electronics Part Number:

FA4F4M-T1B-A-DG

Description:

TRANS PREBIAS NPN 50V 0.1A
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW

Inventory:

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12853637
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FA4F4M-T1B-A Technical Specifications

Category
Bipolar (BJT), Single, Pre-Biased Bipolar Transistors
Manufacturer
Renesas Electronics Corporation
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
22 kOhms
Resistor - Emitter Base (R2)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
200mV @ 250µ, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Power - Max
200 mW
Base Product Number
FA4F4M

Additional Information

Standard Package
1

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

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DIGI Certification
certification_01
certification_02
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certification_015
certification_08
esd
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