Manufacturer Product Number:
2SK1341-E
Product Overview
Manufacturer:
Renesas Electronics Corporation
DiGi Electronics Part Number:
2SK1341-E-DG
Description:
MOSFET N-CH 900V 6A TO3P
Detailed Description:
N-Channel 900 V 6A (Ta) 100W (Tc) Through Hole TO-3P
Inventory:
12861393
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2SK1341-E Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Renesas Electronics Corporation
Packaging
-
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
-
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
980 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
2SK1341
Datasheet & Documents
Datasheets
Additional Information
Standard Package
1
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IXFH12N90P
MANUFACTURER
IXYS
QUANTITY AVAILABLE
1289
DiGi PART NUMBER
IXFH12N90P-DG
UNIT PRICE
5.21
SUBSTITUTE TYPE
Similar
DIGI Certification
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