NJVMJD112G
Manufacturer Product Number:

NJVMJD112G

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

NJVMJD112G-DG

Description:

TRANS NPN DARL 100V 2A DPAK
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Surface Mount DPAK

Inventory:

12840543
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NJVMJD112G Technical Specifications

Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
onsemi
Packaging
Tube
Series
-
Product Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (Max)
20µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Power - Max
1.75 W
Frequency - Transition
25MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
DPAK
Base Product Number
NJVMJD112

Datasheet & Documents

Datasheets

Additional Information

Other Names
2832-NJVMJD112G
Standard Package
75

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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