Manufacturer Product Number:
FQI4N20LTU
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
FQI4N20LTU-DG
Description:
MOSFET N-CH 200V 3.8A I2PAK
Detailed Description:
N-Channel 200 V 3.8A (Tc) 3.13W (Ta), 45W (Tc) Through Hole TO-262 (I2PAK)
Inventory:
12849068
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FQI4N20LTU Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
QFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
1.35Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
310 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 45W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FQI4
Datasheet & Documents
Datasheets
Additional Information
Standard Package
50
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IRF610LPBF
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
0
DiGi PART NUMBER
IRF610LPBF-DG
UNIT PRICE
0.72
SUBSTITUTE TYPE
Similar
DIGI Certification
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