Manufacturer Product Number:
FQI27N25TU
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
FQI27N25TU-DG
Description:
MOSFET N-CH 250V 25.5A I2PAK
Detailed Description:
N-Channel 250 V 25.5A (Tc) 3.13W (Ta), 180W (Tc) Through Hole TO-262 (I2PAK)
Inventory:
12850043
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FQI27N25TU Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
QFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
25.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 12.75A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 180W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FQI27N25
Datasheet & Documents
Datasheets
Additional Information
Other Names
FAIFSCFQI27N25TU
2156-FQI27N25TU-OS
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IRF640NLPBF
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
794
DiGi PART NUMBER
IRF640NLPBF-DG
UNIT PRICE
0.90
SUBSTITUTE TYPE
Similar
DIGI Certification
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