Manufacturer Product Number:
FQA8N100C
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
FQA8N100C-DG
Description:
MOSFET N-CH 1000V 8A TO3PN
Detailed Description:
N-Channel 1000 V 8A (Tc) 225W (Tc) Through Hole TO-3PN
Inventory:
230 Pcs New Original In Stock
12849016
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FQA8N100C Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
Tube
Series
QFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.45Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3220 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
225W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PN
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FQA8
Datasheet & Documents
Datasheets
Additional Information
Other Names
FQA8N100C-DG
FQA8N100CFS
2156-FQA8N100C-OS
ONSONSFQA8N100C
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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