Manufacturer Product Number:
FQA13N50C-F109
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
FQA13N50C-F109-DG
Description:
MOSFET N-CH 500V 13.5A TO3P
Detailed Description:
N-Channel 500 V 13.5A (Tc) 218W (Tc) Through Hole TO-3P
Inventory:
12838434
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FQA13N50C-F109 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
QFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
13.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
480mOhm @ 6.75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2055 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
218W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FQA13
Datasheet & Documents
Datasheets
Additional Information
Other Names
FQA13N50C_F109
2832-FQA13N50C-F109
FQA13N50C_F109-DG
FQA13N50CF109
Standard Package
450
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
TK39J60W,S1VQ
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
22
DiGi PART NUMBER
TK39J60W,S1VQ-DG
UNIT PRICE
5.38
SUBSTITUTE TYPE
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