FDS86267P
Manufacturer Product Number:

FDS86267P

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

FDS86267P-DG

Description:

MOSFET P-CH 150V 2.2A 8SOIC
Detailed Description:
P-Channel 150 V 2.2A (Ta) 1W (Ta) Surface Mount 8-SOIC

Inventory:

1760 Pcs New Original In Stock
12930523
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

FDS86267P Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
255mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1130 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
FDS86267

Datasheet & Documents

Datasheets

Additional Information

Other Names
FDS86267PCT
FDS86267PDKR
FDS86267PTR
Standard Package
2,500

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
onsemi

FQAF33N10L

MOSFET N-CH 100V 25.8A TO3PF

onsemi

HUFA76423D3ST

MOSFET N-CH 60V 20A TO252AA

onsemi

NTD6600N-1G

MOSFET N-CH 100V 12A IPAK

alpha-and-omega-semiconductor

AOTF11N70

MOSFET N-CH 700V 11A TO220-3F