FDC2612
Manufacturer Product Number:

FDC2612

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

FDC2612-DG

Description:

MOSFET N-CH 200V 1.1A SUPERSOT6
Detailed Description:
N-Channel 200 V 1.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Inventory:

12838173
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

FDC2612 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
725mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
234 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
1.6W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SuperSOT™-6
Package / Case
SOT-23-6 Thin, TSOT-23-6
Base Product Number
FDC2612

Datasheet & Documents

Datasheets

Additional Information

Other Names
FDC2612-DG
FDC2612CT
FDC2612TR
FDC2612DKR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
infineon-technologies

62-0136PBF

MOSFET N-CH 30V 19A 8-SOIC

onsemi

FQI13N06LTU

MOSFET N-CH 60V 13.6A I2PAK

onsemi

FDP039N08B-F102

MOSFET N-CH 80V 120A TO220-3

onsemi

ECH8419-TL-H

MOSFET N-CH 35V 9A 8ECH