Manufacturer Product Number:
FCI25N60N-F102
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
FCI25N60N-F102-DG
Description:
MOSFET N-CH 600V 25A I2PAK
Detailed Description:
N-Channel 600 V 25A (Tc) 216W (Tc) Through Hole TO-262 (I2PAK)
Inventory:
12839001
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FCI25N60N-F102 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
SupreMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3352 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
216W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FCI25N60
Datasheet & Documents
Datasheets
Additional Information
Other Names
FCI25N60N_F102-DG
FCI25N60N_F102
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPI60R099CPXKSA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
500
DiGi PART NUMBER
IPI60R099CPXKSA1-DG
UNIT PRICE
3.99
SUBSTITUTE TYPE
Similar
DIGI Certification
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