2SK4066-1E
Manufacturer Product Number:

2SK4066-1E

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

2SK4066-1E-DG

Description:

MOSFET N-CH 60V 100A TO262-3
Detailed Description:
N-Channel 60 V 100A (Ta) 1.65W (Ta), 90W (Tc) Through Hole TO-262-3

Inventory:

RFQ Online
12836227
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2SK4066-1E Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
4.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
220 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12500 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
1.65W (Ta), 90W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
2SK4066

Datasheet & Documents

Datasheets
2SK4066

Additional Information

Other Names
ONSONS2SK4066-1E
2156-2SK4066-1E-ON
Standard Package
50

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
FDP050AN06A0
MANUFACTURER
onsemi
QUANTITY AVAILABLE
6627
DiGi PART NUMBER
FDP050AN06A0-DG
UNIT PRICE
1.14
SUBSTITUTE TYPE
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