Manufacturer Product Number:
2SD863E-AE
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
2SD863E-AE-DG
Description:
BIP NPN 1A 50V
Detailed Description:
Bipolar (BJT) Transistor NPN 50 V 1 A 150MHz 900 mW Through Hole 3-MP
Inventory:
9000 Pcs New Original In Stock
12936535
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2SD863E-AE Technical Specifications
Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
onsemi
Packaging
Bulk
Series
-
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA, 2V
Power - Max
900 mW
Frequency - Transition
150MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
3-MP
Datasheet & Documents
Datasheets
Additional Information
Other Names
ONSONS2SD863E-AE
2156-2SD863E-AE
Standard Package
2,219
Environmental & Export Classification
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
DIGI Certification
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