Manufacturer Product Number:
2SC3598E
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
2SC3598E-DG
Description:
NPN SILICON TRANSISTOR
Detailed Description:
Bipolar (BJT) Transistor NPN 120 V 200 mA 500MHz 1.2 W Through Hole TO-126
Inventory:
6800 Pcs New Original In Stock
12968708
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2SC3598E Technical Specifications
Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
onsemi
Packaging
Bulk
Series
-
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
200 mA
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
800mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 10V
Power - Max
1.2 W
Frequency - Transition
500MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-2SC3598E
ONSSNY2SC3598E
Standard Package
2,219
Environmental & Export Classification
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
DIGI Certification
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