2SC3596E
Manufacturer Product Number:

2SC3596E

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

2SC3596E-DG

Description:

POWER BIPOLAR TRANSISTOR NPN
Detailed Description:
Bipolar (BJT) Transistor NPN 60 V 300 mA 700MHz 1.2 W Through Hole TO-126

Inventory:

17014 Pcs New Original In Stock
12931590
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

2SC3596E Technical Specifications

Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
onsemi
Packaging
Bulk
Series
-
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
300 mA
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA, 10V
Power - Max
1.2 W
Frequency - Transition
700MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126

Datasheet & Documents

Datasheets

Additional Information

Other Names
ONSONS2SC3596E
2156-2SC3596E
Standard Package
437

Environmental & Export Classification

RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
DIGI Certification
Related Products
onsemi

2SC3458L

NPN SILICON TRANSISTOR

onsemi

2SC3956E

NPN SILICON TRANSISTOR

onsemi

2SA1338-5-TB-E

SMALL SIGNAL BIPOLAR TRANSISTOR

infineon-technologies

BC817K-25WH6327

BIPOLAR GEN PURPOSE TRANSISTOR