PHE13009/DG,127
Manufacturer Product Number:

PHE13009/DG,127

Product Overview

Manufacturer:

NXP USA Inc.

DiGi Electronics Part Number:

PHE13009/DG,127-DG

Description:

NOW WEEN - PHE13009 - POWER BIPO
Detailed Description:
Bipolar (BJT) Transistor NPN 400 V 12 A 80 W Through Hole TO-220AB

Inventory:

3680 Pcs New Original In Stock
12947849
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

PHE13009/DG,127 Technical Specifications

Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
NXP Semiconductors
Packaging
Bulk
Series
-
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
12 A
Voltage - Collector Emitter Breakdown (Max)
400 V
Vce Saturation (Max) @ Ib, Ic
2V @ 1.6A, 8A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 5A, 5V
Power - Max
80 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB

Datasheet & Documents

Additional Information

Other Names
WENNXPPHE13009/DG,127
2156-PHE13009/DG,127
Standard Package
912

Environmental & Export Classification

ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
nxp-semiconductors

PMSS3904135

NOW NEXPERIA PMSS3904 - SMALL SI

fairchild-semiconductor

NZT753

POWER BIPOLAR TRANSISTOR, 4A, 10

nxp-semiconductors

PHE13003C,126

NOW WEEN - PHE13003C - POWER BIP

nxp-semiconductors

PMBT4403YSX

TRANS PNP 40V 0.6A SOT23