GAN080-650EBEZ
Manufacturer Product Number:

GAN080-650EBEZ

Product Overview

Manufacturer:

Nexperia USA Inc.

DiGi Electronics Part Number:

GAN080-650EBEZ-DG

Description:

650 V, 80 MOHM GALLIUM NITRIDE (
Detailed Description:
N-Channel 650 V 29A (Ta) 240W (Ta) Surface Mount, Wettable Flank DFN8080-8

Inventory:

2228 Pcs New Original In Stock
13001071
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

GAN080-650EBEZ Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Nexperia
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
29A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V
Rds On (Max) @ Id, Vgs
80mOhm @ 8A, 6V
Vgs(th) (Max) @ Id
2.5V @ 30.7mA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 6 V
Vgs (Max)
+7V, -6V
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
240W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount, Wettable Flank
Supplier Device Package
DFN8080-8
Package / Case
8-VDFN Exposed Pad
Base Product Number
GAN080

Datasheet & Documents

Datasheets

Additional Information

Other Names
934665901332
5202-GAN080-650EBEZTR
1727-GAN080-650EBEZDKR
1727-GAN080-650EBEZCT
1727-GAN080-650EBEZTR
Standard Package
2,500

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
rohm-semi

SCT4045DRHRC15

750V, 34A, 4-PIN THD, TRENCH-STR

goford-semiconductor

G26P04K

P-40V,RD(MAX)<18M@-10V,RD(MAX)<2

rohm-semi

RS6L120BGTB1

NCH 60V 120A, HSOP8, POWER MOSFE

goford-semiconductor

G11S

P-20V,RD(MAX)<[email protected],RD(MAX