Manufacturer Product Number:
GAN063-650WSAQ
Product Overview
Manufacturer:
Nexperia USA Inc.
DiGi Electronics Part Number:
GAN063-650WSAQ-DG
Description:
GANFET N-CH 650V 34.5A TO247-3
Detailed Description:
N-Channel 650 V 34.5A (Ta) 143W (Ta) Through Hole TO-247-3
Inventory:
582 Pcs New Original In Stock
12830466
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GAN063-650WSAQ Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Nexperia
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
34.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
143W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
GAN063
Datasheet & Documents
Datasheets
Additional Information
Other Names
1727-8711-6INACTIVE
5202-GAN063-650WSAQTR
1727-8711-6-DG
1727-8711-1INACTIVE
1727-8711-2-DG
1727-8711-1-DG
1727-8711-1
1727-8711-2
2156-GAN063-650WSAQ
GAN063-650WSA
1727-8711-6
1727-GAN063-650WSAQ
934660022127
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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