JAN2N7334
Manufacturer Product Number:

JAN2N7334

Product Overview

Manufacturer:

Microsemi Corporation

DiGi Electronics Part Number:

JAN2N7334-DG

Description:

MOSFET 4N-CH 100V 1A MO-036AB
Detailed Description:
Mosfet Array 100V 1A 1.4W Through Hole MO-036AB

Inventory:

12929658
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

JAN2N7334 Technical Specifications

Category
FETs, MOSFETs, FET, MOSFET Arrays
Manufacturer
Microsemi
Packaging
-
Series
-
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
4 N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
1A
Rds On (Max) @ Id, Vgs
700mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.4W
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/597
Mounting Type
Through Hole
Package / Case
14-DIP (0.300", 7.62mm)
Supplier Device Package
MO-036AB
Base Product Number
2N733

Datasheet & Documents

Datasheets

Additional Information

Other Names
JAN2N7334-MIL
150-JAN2N7334
JAN2N7334-DG
Standard Package
1

Environmental & Export Classification

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
rohm-semi

SP8M3FU7TB1

MOSFET N/P-CH 30V 5A/4.5A 8SOP

onsemi

NDS9957

MOSFET 2N-CH 60V 2.6A 8SOIC

wolfspeed

CAB425M12XM3

SIC 2N-CH 1200V 450A

rohm-semi

SP8K3FD5TB1

MOSFET 2N-CH 30V 8SOP