Home
Products
Manufacturers
About DiGi
Contact Us
Blogs & Posts
RFQ/Quote
New Zealand
Sign in
Selective Language
Current language of your choice:
New Zealand
Switch:
English
Europe
United Kingdom
France
Spain
Turkey
Moldova
Lithuania
Norway
Germany
Portugal
Slovakia
ltaly
Finland
Russian
Bulgaria
Denmark
Estonia
Poland
Ukraine
Slovenia
Czech
Greek
Croatia
Israel
Serbia
Belarus
Netherlands
Sweden
Montenegro
Basque
Iceland
Bosnia
Hungarian
Romania
Austria
Belgium
Ireland
Asia / Pacific
China
Vietnam
Indonesia
Thailand
Laos
Filipino
Malaysia
Korea
Japan
HongKong
TaiWan
Singapore
Pakistan
Saudi Arabia
Qatar
Kuwait
Cambodia
Myanmar
Africa,India and Middle East
United Arab Emirates
Tajikistan
Madagascar
India
Iran
DR Congo
South Africa
Egypt
Kenya
Tanzania
Ghana
Senegal
Morocco
Tunisia
South America / Oceania
New Zealand
Angola
Brazil
Mozambique
Peru
Colombia
Chile
Venezuela
Ecuador
Bolivia
Uruguay
Argentina
Paraguay
Australia
North America
United States
Haiti
Canada
Costa Rica
Mexico
About DiGi
About Us
About Us
Our Certifications
DiGi Introduction
Why DiGi
Policy
Quality Policy
Terms of use
RoHS Compliance
Return Process
Resources
Product Categories
Manufacturers
Blogs & Posts
Services
Quality Warranty
Payment Way
Global Shipment
Shipping Rates
FAQs
Manufacturer Product Number:
JAN2N7334
Product Overview
Manufacturer:
Microsemi Corporation
DiGi Electronics Part Number:
JAN2N7334-DG
Description:
MOSFET 4N-CH 100V 1A MO-036AB
Detailed Description:
Mosfet Array 100V 1A 1.4W Through Hole MO-036AB
Inventory:
RFQ Online
12929658
Request Quote
Quantity
Minimum 1
*
Company
*
Contact Name
*
Phone
*
E-mail
Delivery Address
Message
(
*
) is mandatory
We'll get back to you within 24 hours
SUBMIT
JAN2N7334 Technical Specifications
Category
FETs, MOSFETs, FET, MOSFET Arrays
Manufacturer
Microsemi
Packaging
-
Series
-
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
4 N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
1A
Rds On (Max) @ Id, Vgs
700mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.4W
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/597
Mounting Type
Through Hole
Package / Case
14-DIP (0.300", 7.62mm)
Supplier Device Package
MO-036AB
Base Product Number
2N733
Datasheet & Documents
Datasheets
2N7334
Additional Information
Other Names
JAN2N7334-MIL
150-JAN2N7334
JAN2N7334-DG
Standard Package
1
Environmental & Export Classification
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
SP8M3FU7TB1
MOSFET N/P-CH 30V 5A/4.5A 8SOP
NDS9957
MOSFET 2N-CH 60V 2.6A 8SOIC
CAB425M12XM3
SIC 2N-CH 1200V 450A
SP8K3FD5TB1
MOSFET 2N-CH 30V 8SOP