APT11N80KC3G
Manufacturer Product Number:

APT11N80KC3G

Product Overview

Manufacturer:

Microsemi Corporation

DiGi Electronics Part Number:

APT11N80KC3G-DG

Description:

MOSFET N-CH 800V 11A TO220
Detailed Description:
N-Channel 800 V 11A (Tc) 156W (Tc) Through Hole TO-220 [K]

Inventory:

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13261983
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APT11N80KC3G Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Microsemi
Packaging
-
Series
CoolMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1585 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220 [K]
Package / Case
TO-220-3

Datasheet & Documents

Datasheets
High-Voltage Power Discretes and Modules

Additional Information

Other Names
APT11N80KC3GMI-ND
APT11N80KC3GMI
APT11N80KC3G-ND
150-APT11N80KC3G
Standard Package
50

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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