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Manufacturer Product Number:
IRFB812PBF
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IRFB812PBF-DG
Description:
MOSFET N CH 500V 3.6A TO220AB
Detailed Description:
N-Channel 500 V 3.6A (Tc) 78W (Tc) Through Hole TO-220AB
Inventory:
RFQ Online
12819665
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SUBMIT
IRFB812PBF Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
HEXFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
810 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRFB812
Datasheet & Documents
Datasheets
IRFB812PBF
Additional Information
Other Names
2156-IRFB812PBF
SP001563948
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
STU4N52K3
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
2513
DiGi PART NUMBER
STU4N52K3-DG
UNIT PRICE
0.45
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
IXTP1R6N50D2
MANUFACTURER
IXYS
QUANTITY AVAILABLE
0
DiGi PART NUMBER
IXTP1R6N50D2-DG
UNIT PRICE
1.55
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
STP4N52K3
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
2208
DiGi PART NUMBER
STP4N52K3-DG
UNIT PRICE
0.49
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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