Manufacturer Product Number:
IRFB3306PBF
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IRFB3306PBF-DG
Description:
MOSFET N-CH 60V 120A TO220AB
Detailed Description:
N-Channel 60 V 120A (Tc) 230W (Tc) Through Hole TO-220AB
Inventory:
5368 Pcs New Original In Stock
13064037
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IRFB3306PBF Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
HEXFET®
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4520 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRFB3306
Datasheet & Documents
Datasheets
Additional Information
Other Names
448-IRFB3306PBF
IRFB3306PBF-ND
SP001556002
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IPD80R1K2P7ATMA1
MOSFET N-CH 800V 4.5A TO252-3
IPP65R600C6XKSA1
MOSFET N-CH 650V 7.3A TO220-3
IPD06P004NATMA1
MOSFET P-CH 60V 16.4A TO252-3
