IRF200B211
Manufacturer Product Number:

IRF200B211

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IRF200B211-DG

Description:

MOSFET N-CH 200V 12A TO220AB
Detailed Description:
N-Channel 200 V 12A (Tc) 80W (Tc) Through Hole TO-220AB

Inventory:

4746 Pcs New Original In Stock
12802645
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IRF200B211 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
HEXFET®, StrongIRFET™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id
4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
80W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF200

Datasheet & Documents

Datasheets
IRF200B211

Additional Information

Other Names
SP001561622
INFIRFIRF200B211
2166-IRF200B211-448
2156-IRF200B211
Standard Package
50

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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