IPW65R280C6FKSA1
Manufacturer Product Number:

IPW65R280C6FKSA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPW65R280C6FKSA1-DG

Description:

MOSFET N-CH 650V 13.8A TO247-3
Detailed Description:
N-Channel 650 V 13.8A (Tc) 104W (Tc) Through Hole PG-TO247-3-1

Inventory:

12805684
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

IPW65R280C6FKSA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
950 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-1
Package / Case
TO-247-3
Base Product Number
IPW65R

Datasheet & Documents

Additional Information

Other Names
2156-IPW65R280C6FKSA1-IT
SP000785060
IPW65R280C6
IPW65R280C6-DG
INFINFIPW65R280C6FKSA1
Standard Package
240

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
TK14N65W,S1F
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
0
DiGi PART NUMBER
TK14N65W,S1F-DG
UNIT PRICE
1.41
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
Related Products
infineon-technologies

IPI80P04P405AKSA1

MOSFET P-CH 40V 80A TO262-3

infineon-technologies

IRFR3411PBF

MOSFET N-CH 100V 32A DPAK

infineon-technologies

IRF135S203

MOSFET N-CH 135V 129A TO263-3

infineon-technologies

IRFHM8334TRPBF

MOSFET N-CH 30V 13A 8PQFN