Manufacturer Product Number:
IPW65R125CFD7XKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPW65R125CFD7XKSA1-DG
Description:
HIGH POWER_NEW
Detailed Description:
N-Channel 650 V 19A (Tc) 98W (Tc) Through Hole PG-TO247-3
Inventory:
12988685
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPW65R125CFD7XKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS™ CFD7
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 420µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1694 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
98W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
Base Product Number
IPW65R
Datasheet & Documents
Datasheets
Additional Information
Other Names
448-IPW65R125CFD7XKSA1
SP005413372
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
TK7A80W,S4X
PB-F POWER MOSFET TRANSISTOR TO-
S2M0025120D
MOSFET SILICON CARBIDE SIC 1200V
TK8A25DA,S4X
PB-F POWER MOSFET TRANSISTOR TO-
