IPW65R125CFD7XKSA1
Manufacturer Product Number:

IPW65R125CFD7XKSA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPW65R125CFD7XKSA1-DG

Description:

HIGH POWER_NEW
Detailed Description:
N-Channel 650 V 19A (Tc) 98W (Tc) Through Hole PG-TO247-3

Inventory:

12988685
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IPW65R125CFD7XKSA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS™ CFD7
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 420µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1694 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
98W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
Base Product Number
IPW65R

Datasheet & Documents

Additional Information

Other Names
448-IPW65R125CFD7XKSA1
SP005413372
Standard Package
30

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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