Manufacturer Product Number:
IPW60R045P7XKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPW60R045P7XKSA1-DG
Description:
MOSFET N-CH 650V 61A TO247-3-41
Detailed Description:
N-Channel 650 V 61A (Tc) 201W (Tc) Through Hole PG-TO247-3-41
Inventory:
1406 Pcs New Original In Stock
13276449
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPW60R045P7XKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS™ P7
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
45mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1.08mA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3891 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
201W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
TO-247-3
Base Product Number
IPW60R045
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP001866186
448-IPW60R045P7XKSA1
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IAUZ18N10S5L420ATMA1
MOSFET N-CH 100V 18A TSDSON-8-32
IPA126N10NM3SXKSA1
MOSFET N-CH 100V 39A TO220
IPLK80R750P7ATMA1
MOSFET 800V TDSON-8
