Manufacturer Product Number:
IPN60R1K0CEATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPN60R1K0CEATMA1-DG
Description:
MOSFET N-CH 600V 6.8A SOT223
Detailed Description:
N-Channel 600 V 6.8A (Tc) 5W (Tc) Surface Mount PG-SOT223-3
Inventory:
12818273
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IPN60R1K0CEATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolMOS™ CE
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
5W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-3
Package / Case
TO-261-4, TO-261AA
Base Product Number
IPN60R1
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPN60R1K0CEATMA1-DG
2156-IPN60R1K0CEATMA1TR
SP001434884
IPN60R1K0CEATMA1CT
IPN60R1K0CEATMA1DKR
IPN60R1K0CEATMA1TR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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