IPL60R285P7AUMA1
Manufacturer Product Number:

IPL60R285P7AUMA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPL60R285P7AUMA1-DG

Description:

MOSFET N-CH 600V 13A 4VSON
Detailed Description:
N-Channel 600 V 13A (Tc) 59W (Tc) Surface Mount PG-VSON-4

Inventory:

RFQ Online
12804801
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

IPL60R285P7AUMA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolMOS™ P7
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
285mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
761 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
59W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-VSON-4
Package / Case
4-PowerTSFN
Base Product Number
IPL60R285

Datasheet & Documents

Datasheets
IPL60R285P7AUMA1

Additional Information

Other Names
SP001657424
IPL60R285P7AUMA1-DG
IPL60R285P7AUMA1TR
IPL60R285P7AUMA1CT
IPL60R285P7AUMA1DKR
IPL60R285P7
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Related Products
infineon-technologies

IRFP460PBF

MOSFET N-CH 500V 20A TO247AC

infineon-technologies

IRF3610STRLPBF

MOSFET N-CH 100V 103A D2PAK

infineon-technologies

IPS65R950C6AKMA1

MOSFET N-CH 650V 4.5A TO251-3

infineon-technologies

IPS80R2K4P7AKMA1

MOSFET N-CH 800V 2.5A TO251-3