Manufacturer Product Number:
IPI65R110CFDXKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPI65R110CFDXKSA1-DG
Description:
MOSFET N-CH 650V 31.2A TO262-3
Detailed Description:
N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO262-3
Inventory:
12805494
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IPI65R110CFDXKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs
118 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3240 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
277.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI65R
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPI65R110CFD-DG
2156-IPI65R110CFDXKSA1
IPI65R110CFD
INFINFIPI65R110CFDXKSA1
SP000896398
Standard Package
500
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
STI33N60M2
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
0
DiGi PART NUMBER
STI33N60M2-DG
UNIT PRICE
1.72
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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