Manufacturer Product Number:
IPI024N06N3GXKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPI024N06N3GXKSA1-DG
Description:
MOSFET N-CH 60V 120A TO262-3
Detailed Description:
N-Channel 60 V 120A (Tc) 250W (Tc) Through Hole PG-TO262-3-1
Inventory:
12801611
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPI024N06N3GXKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 196µA
Gate Charge (Qg) (Max) @ Vgs
275 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
23000 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI024
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPI024N06N3GXKSA1-DG
SP000680644
448-IPI024N06N3GXKSA1
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IPP030N10N5AKSA1
MOSFET N-CH 100V 120A TO220-3
BSR316PH6327XTSA1
MOSFET P-CH 100V 360MA SC59
64-2096PBF
MOSFET N-CH 75V 160A D2PAK
