Manufacturer Product Number:
IPD60R1K0CEAUMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPD60R1K0CEAUMA1-DG
Description:
MOSFET N-CH 600V 6.8A 61W TO252
Detailed Description:
N-Channel 600 V 6.8A (Tc) 61W (Tc) Surface Mount PG-TO252-3-344
Inventory:
7232 Pcs New Original In Stock
12800132
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IPD60R1K0CEAUMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
CoolMOS™ CE
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
61W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-344
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD60R
Datasheet & Documents
Datasheets
Additional Information
Other Names
ROCINFIPD60R1K0CEAUMA1
SP001396896
448-IPD60R1K0CEAUMA1DKR
448-IPD60R1K0CEAUMA1CT
448-IPD60R1K0CEAUMA1TR
2156-IPD60R1K0CEAUMA1
IPD60R1K0CEAUMA1-DG
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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