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Manufacturer Product Number:
IPD50R800CEATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPD50R800CEATMA1-DG
Description:
MOSFET N CH 500V 5A TO252
Detailed Description:
N-Channel 500 V 5A (Tc) 60W (Tc) Surface Mount PG-TO252-3
Inventory:
RFQ Online
12799696
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IPD50R800CEATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
CoolMOS™ CE
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
800mOhm @ 1.5A, 13V
Vgs(th) (Max) @ Id
3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs
12.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD50R
Datasheet & Documents
Datasheets
IPD50R800CEATMA1
Additional Information
Other Names
IPD50R800CEATMA1-DG
SP001117710
IPD50R800CEATMA1TR
IPD50R800CEATMA1CT
IPD50R800CEATMA1DKR
ROCINFIPD50R800CEATMA1
2156-IPD50R800CEATMA1-ITTR
Standard Package
2,500
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
STD8NM50N
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
1231
DiGi PART NUMBER
STD8NM50N-DG
UNIT PRICE
0.88
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
IPD50R800CEAUMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
5199
DiGi PART NUMBER
IPD50R800CEAUMA1-DG
UNIT PRICE
0.23
SUBSTITUTE TYPE
Direct
DIGI Certification
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