Manufacturer Product Number:
IPB083N10N3GATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPB083N10N3GATMA1-DG
Description:
MOSFET N-CH 100V 80A D2PAK
Detailed Description:
N-Channel 100 V 80A (Tc) 125W (Tc) Surface Mount PG-TO263-3
Inventory:
4514 Pcs New Original In Stock
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IPB083N10N3GATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
8.3mOhm @ 73A, 10V
Vgs(th) (Max) @ Id
3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3980 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB083
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPB083N10N3 GDKR-DG
IPB083N10N3G
IPB083N10N3 G
IPB083N10N3GATMA1DKR
SP000458812
IPB083N10N3GATMA1TR
IPB083N10N3 GDKR
IPB083N10N3 GCT
IPB083N10N3 G-DG
IPB083N10N3 GCT-DG
IPB083N10N3GATMA1CT
IPB083N10N3 GTR-DG
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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