IPB067N08N3GATMA1
Manufacturer Product Number:

IPB067N08N3GATMA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IPB067N08N3GATMA1-DG

Description:

MOSFET N-CH 80V 80A D2PAK
Detailed Description:
N-Channel 80 V 80A (Tc) 136W (Tc) Surface Mount PG-TO263-3

Inventory:

5515 Pcs New Original In Stock
12800485
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

IPB067N08N3GATMA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
6.7mOhm @ 73A, 10V
Vgs(th) (Max) @ Id
3.5V @ 73µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3840 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
136W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB067

Datasheet & Documents

Additional Information

Other Names
IPB067N08N3G
IPB067N08N3 GDKR-DG
IPB067N08N3 GTR-DG
IPB067N08N3 GDKR
IPB067N08N3GATMA1DKR
IPB067N08N3GATMA1CT
IPB067N08N3GATMA1TR
IPB067N08N3 G-DG
SP000443636
IPB067N08N3 GCT-DG
IPB067N08N3 GCT
IPB067N08N3 G
Standard Package
1,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
infineon-technologies

IPD14N06S280ATMA2

MOSFET N-CH 55V 17A TO252-31

infineon-technologies

BSZ0902NSIATMA1

MOSFET N-CH 30V 21A/40A TSDSON

infineon-technologies

IPD135N08N3GBTMA1

MOSFET N-CH 80V 45A TO252-3

infineon-technologies

IPB034N06N3GATMA1

MOSFET N-CH 60V 100A TO263-7