Manufacturer Product Number:
IPA80R650CEXKSA2
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPA80R650CEXKSA2-DG
Description:
MOSFET N-CH 800V 8A TO220-3F
Detailed Description:
N-Channel 800 V 8A (Ta) 33W (Tc) Through Hole TO-220-3F
Inventory:
459 Pcs New Original In Stock
12804965
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IPA80R650CEXKSA2 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 470µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
33W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3F
Package / Case
TO-220-3 Full Pack
Base Product Number
IPA80R650
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP001313394
ROCINFIPA80R650CEXKSA2
2156-IPA80R650CEXKSA2
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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