Manufacturer Product Number:
IPA80R1K4P7XKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPA80R1K4P7XKSA1-DG
Description:
MOSFET N-CH 800V 4A TO220-3F
Detailed Description:
N-Channel 800 V 4A (Tc) 24W (Tc) Through Hole PG-TO220-3-31
Inventory:
112 Pcs New Original In Stock
12804051
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IPA80R1K4P7XKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
24W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-31
Package / Case
TO-220-3 Full Pack
Base Product Number
IPA80R1
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-IPA80R1K4P7XKSA1
SP001422546
ROCINFIPA80R1K4P7XKSA1
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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