BSP149H6327XTSA1
Manufacturer Product Number:

BSP149H6327XTSA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

BSP149H6327XTSA1-DG

Description:

MOSFET N-CH 200V 660MA SOT223-4
Detailed Description:
N-Channel 200 V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Inventory:

25184 Pcs New Original In Stock
12799040
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BSP149H6327XTSA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
SIPMOS®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V
Rds On (Max) @ Id, Vgs
1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id
1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
430 pF @ 25 V
FET Feature
Depletion Mode
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4
Package / Case
TO-261-4, TO-261AA
Base Product Number
BSP149

Datasheet & Documents

Additional Information

Other Names
SP001058818
BSP149H6327XTSA1CT
BSP149H6327XTSA1DKR
BSP149H6327XTSA1TR
Standard Package
1,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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