Manufacturer Product Number:
AIMW120R045M1XKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
AIMW120R045M1XKSA1-DG
Description:
SICFET N-CH 1200V 52A TO247-3
Detailed Description:
N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3
Inventory:
239 Pcs New Original In Stock
12948663
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AIMW120R045M1XKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolSiC™
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Rds On (Max) @ Id, Vgs
59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 15 V
Vgs (Max)
+20V, -7V
Input Capacitance (Ciss) (Max) @ Vds
2130 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
228W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
Base Product Number
AIMW120
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP002472666
448-AIMW120R045M1XKSA1
2156-AIMW120R045M1XKSA1-448
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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