Manufacturer Product Number:
RF1S50N06
Product Overview
Manufacturer:
Harris Corporation
DiGi Electronics Part Number:
RF1S50N06-DG
Description:
50A, 60V, 0.022 OHM, N-CHANNEL
Detailed Description:
N-Channel 60 V 50A (Tc) 131W (Tc) Through Hole I2PAK (TO-262)
Inventory:
2746 Pcs New Original In Stock
12955141
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RF1S50N06 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
22mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2020 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
131W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK (TO-262)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-RF1S50N06
HARHARRF1S50N06
Standard Package
290
Environmental & Export Classification
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
DIGI Certification
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