GT023N10M
Manufacturer Product Number:

GT023N10M

Product Overview

Manufacturer:

Goford Semiconductor

DiGi Electronics Part Number:

GT023N10M-DG

Description:

N100V,140A,RD<2.7M@10V,VTH2.7V~4
Detailed Description:
N-Channel 100 V 140A (Tc) 500W (Tc) Surface Mount TO-263

Inventory:

800 Pcs New Original In Stock
13004016
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GT023N10M Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8050 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet & Documents

Datasheets

Additional Information

Other Names
3141-GT023N10MTR
Standard Package
800

Environmental & Export Classification

RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0000
DIGI Certification
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