Manufacturer Product Number:
G2012
Product Overview
Manufacturer:
Goford Semiconductor
DiGi Electronics Part Number:
G2012-DG
Description:
N20V,RD(MAX)<[email protected],RD(MAX)<18
Detailed Description:
N-Channel 20 V 12A (Tc) 1.5W (Tc) Surface Mount 6-DFN (2x2)
Inventory:
2994 Pcs New Original In Stock
13000377
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G2012 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
12mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
1255 pF @ 10 V
FET Feature
Standard
Power Dissipation (Max)
1.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-DFN (2x2)
Package / Case
6-WDFN Exposed Pad
Datasheet & Documents
Datasheets
Additional Information
Other Names
3141-G2012DKR
4822-G2012TR
3141-G2012TR
3141-G2012CT
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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