G110N06T
Manufacturer Product Number:

G110N06T

Product Overview

Manufacturer:

Goford Semiconductor

DiGi Electronics Part Number:

G110N06T-DG

Description:

MOSFET N-CH 60V 110A TO-220
Detailed Description:
N-Channel 110A (Tc) 160W (Tc) Through Hole TO-220

Inventory:

6000 Pcs New Original In Stock
13001180
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

G110N06T Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tube
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Vgs (Max)
±20V
FET Feature
Standard
Power Dissipation (Max)
160W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

Datasheet & Documents

Datasheets

Additional Information

Other Names
4822-G110N06T
Standard Package
3,000

Environmental & Export Classification

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
infineon-technologies

IST015N06NM5AUMA1

OPTIMOS 5 POWER MOSFET 60 V

infineon-technologies

IRFP4668PBFXKMA1

TRENCH >=100V PG-TO247-3

panjit

PJQ1906_R1_00001

MOSFET N-CH 30V 300MA DFN-3L

goford-semiconductor

18N20

N 200V, RD(MAX)<0.16@10V,VTH1.0V