G3R12MT12K
Manufacturer Product Number:

G3R12MT12K

Product Overview

Manufacturer:

GeneSiC Semiconductor

DiGi Electronics Part Number:

G3R12MT12K-DG

Description:

1200V 12M TO-247-4 G3R SIC MOSFE
Detailed Description:
N-Channel 1200 V 157A (Tc) 567W (Tc) Through Hole TO-247-4

Inventory:

611 Pcs New Original In Stock
13000424
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G3R12MT12K Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
GeneSiC Semiconductor
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
157A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
13mOhm @ 100A, 18V
Vgs(th) (Max) @ Id
2.7V @ 50mA
Gate Charge (Qg) (Max) @ Vgs
288 nC @ 15 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
9335 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
567W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Base Product Number
G3R12M

Datasheet & Documents

Datasheets

Additional Information

Other Names
1242-G3R12MT12K
Standard Package
30

Environmental & Export Classification

RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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N20V,RD(MAX)<[email protected],RD(MAX)<30