HUF75631S3ST
Manufacturer Product Number:

HUF75631S3ST

Product Overview

Manufacturer:

Fairchild Semiconductor

DiGi Electronics Part Number:

HUF75631S3ST-DG

Description:

MOSFET N-CH 100V 33A D2PAK
Detailed Description:
N-Channel 100 V 33A (Tc) 120W (Tc) Surface Mount TO-263 (D2PAK)

Inventory:

321 Pcs New Original In Stock
12947464
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HUF75631S3ST Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
79 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1220 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
120W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet & Documents

Additional Information

Other Names
FAIFSCHUF75631S3ST
2156-HUF75631S3ST
Standard Package
132

Environmental & Export Classification

ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
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