Manufacturer Product Number:
FQA9N90-F109
Product Overview
Manufacturer:
Fairchild Semiconductor
DiGi Electronics Part Number:
FQA9N90-F109-DG
Description:
POWER FIELD-EFFECT TRANSISTOR, 8
Detailed Description:
N-Channel 900 V 8.6A (Tc) 240W (Tc) Through Hole TO-3PN
Inventory:
398 Pcs New Original In Stock
12947105
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
FQA9N90-F109 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
QFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
8.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.3Ohm @ 4.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
240W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PN
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FQA9
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-FQA9N90-F109
ONSFSCFQA9N90-F109
Standard Package
117
Environmental & Export Classification
ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
Related Products
N0301N-T1-AT
N-CHANNEL MOS FIELD EFFECT TRANS
FDPF10N50FT
POWER FIELD-EFFECT TRANSISTOR, 9
IRF7483MTRPBF
MOSFET N-CH 40V 135A DIRECTFET
