FDS8878
Manufacturer Product Number:

FDS8878

Product Overview

Manufacturer:

Fairchild Semiconductor

DiGi Electronics Part Number:

FDS8878-DG

Description:

POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description:
N-Channel 30 V 10.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Inventory:

570614 Pcs New Original In Stock
12946932
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

FDS8878 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
PowerTrench®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
10.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
14mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
897 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)

Datasheet & Documents

Datasheets

Additional Information

Other Names
2156-FDS8878
FAIFSCFDS8878
Standard Package
1,389

Environmental & Export Classification

ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
Related Products
fairchild-semiconductor

FDFMA3P029Z

MOSFET P-CH 30V 3.3A 6MICROFET

fairchild-semiconductor

FDS6298

POWER FIELD-EFFECT TRANSISTOR, 1

texas-instruments

CSD17303Q5

CSD17303Q5 30V, N CHANNEL NEXFET

fairchild-semiconductor

FDB035AN06A0

POWER FIELD-EFFECT TRANSISTOR, 2